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Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary

2019-07-29

Authors: Kang, JJ; Choi, HJ; Ren, F; Ao, JP; Li, HJ; Li, Y; Du, WC; Zhou, K; Tan, H; Huh, D; Li, PP;

Liang, M; Gao, SX; Tang, C; Yi, XY; Lee, H; Liu, ZQ

JAPANESE JOURNAL OF APPLIED PHYSICS

Volume: 58 Issue: 8 Published: AUG 1 2019 Language: English Document type: Article

DOI: 10.7567/1347-4065/ab293e

Abstract:

In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprint lithography

and a secondary sputtering process. The involvement of a Au nano-ring mask allowed dry etching with a

high aspect ratio on the InGaN/GaN substrate. After device fabrication, the measured optical spectrum

showed this innovative structure provided low reflectance and high absorbance at the wavelength around

the ultraviolet range. The photoelectrochemical properties indicated optimized tube height could

efficiently enhance the water splitting efficiency by 15 times at 1.23 V versus RHE by increasing the

surface reactive area and tuning the optical spectrum properties. The IPCE result also demonstrated a

corresponding enhancement. (C) 2019 The Japan Society of Applied Physics

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