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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-mu m quantum dot lasers

2019-08-12

Authors: Hao, HM; Su, XB; Zhang, J; Ni, HQ; Niu, ZC

CHINESE PHYSICS B

Volume: 28 Issue: 7 Published: JUL 2019 Language: English Document type: Article

DOI: 10.1088/1674-1056/28/7/078104

Abstract:

Systematic investigation of InAs quantum dot (QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots. By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved. The areal quantum dot density is 5.9 x 10(10) cm(-2), almost double the conventional density (3.0 x 10(10) cm(-2)). Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density. These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.

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